全文获取类型
收费全文 | 10022篇 |
免费 | 1555篇 |
国内免费 | 478篇 |
学科分类
工业技术 | 12055篇 |
出版年
2024年 | 19篇 |
2023年 | 183篇 |
2022年 | 121篇 |
2021年 | 289篇 |
2020年 | 332篇 |
2019年 | 256篇 |
2018年 | 268篇 |
2017年 | 356篇 |
2016年 | 421篇 |
2015年 | 448篇 |
2014年 | 743篇 |
2013年 | 595篇 |
2012年 | 775篇 |
2011年 | 861篇 |
2010年 | 627篇 |
2009年 | 666篇 |
2008年 | 695篇 |
2007年 | 732篇 |
2006年 | 735篇 |
2005年 | 625篇 |
2004年 | 463篇 |
2003年 | 390篇 |
2002年 | 346篇 |
2001年 | 259篇 |
2000年 | 200篇 |
1999年 | 135篇 |
1998年 | 93篇 |
1997年 | 83篇 |
1996年 | 75篇 |
1995年 | 59篇 |
1994年 | 47篇 |
1993年 | 33篇 |
1992年 | 34篇 |
1991年 | 20篇 |
1990年 | 27篇 |
1989年 | 16篇 |
1988年 | 6篇 |
1987年 | 3篇 |
1986年 | 2篇 |
1985年 | 2篇 |
1984年 | 3篇 |
1983年 | 5篇 |
1966年 | 2篇 |
1964年 | 1篇 |
1962年 | 1篇 |
1959年 | 2篇 |
1955年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 265 毫秒
1.
The top illuminated organic photodetectors (OPDs) with a Dielectric/Metal/Dielectric (DMD) transparent anode are fabricated. The transparent electrode is composed of molybdenum trioxide (MoO3)/silver (Ag)/MoO3 layers and zinc oxide (ZnO)/aluminum (Al) is used for bottom cathode. The optimized DMD electrode has an optical transmittance of 85.7% at the wavelength of 546 nm and sheet resistance of ∼6 Ω/sq. The fabricated OPDs exhibit a high detectivity and wide range linearity. 相似文献
2.
3.
针对阳煤五矿广场变电站的高压开关老化问题,为了保证安全性,采用了GIS气体的高压绝缘开关进行了改造。在改造后,变电站的安全性得到了显著提高,设备运行可以节省成本200多万元。 相似文献
4.
James E. Tyrrell Martyn G. Boutelle Alasdair J. Campbell 《Advanced functional materials》2021,31(1):2007086
Biological environments use ions in charge transport for information transmission. The properties of mixed electronic and ionic conductivity in organic materials make them ideal candidates to transduce physiological information into electronically processable signals. A device proven to be highly successful in measuring such information is the organic electrochemical transistor (OECT). Previous electrophysiological measurements performed using OECTs show superior signal-to-noise ratios than electrodes at low frequencies. Subsequent development has significantly improved critical performance parameters such as transconductance and response time. Here, interdigitated-electrode OECTs are fabricated on flexible substrates, with one such state-of-the-art device achieving a peak transconductance of 139 mS with a 138 µs response time. The devices are implemented into an array with interconnects suitable for micro-electrocorticographic application and eight architecture variations are compared. The two best-performing arrays are subject to the full electrophysiological spectrum using prerecorded signals. With frequency filtering, kHz-scale frequencies with 10 µV-scale voltages are resolved. This is supported by a novel quantification of the noise, which compares the gate voltage input and drain current output. These results demonstrate that high-performance OECTs can resolve the full electrophysiological spectrum and suggest that superior signal-to-noise ratios could be achieved in high frequency measurements of multiunit activity. 相似文献
5.
1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm2 is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm2 array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall Vmin of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances. 相似文献
6.
Dong‐Wook Kim 《ETRI Journal》2006,28(1):84-86
This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns. 相似文献
7.
8.
宽带DDS跳频源设计 总被引:1,自引:0,他引:1
直接数字合成(DDS)简单可靠、控制方便,具有很高的频率分辨率,高速转换,非常适合快速跳频的要求。在对DDS基本原理进行了简要介绍和分析后,提出宽带跳频源设计方案。 相似文献
9.
10.